Continuing technological advances make possible the fabrication of electronic devices with increasing structural and conceptual complexity, and in an expanding variety of material systems. In the field of Computational Electronics, advanced modeling and simulation techniques are created, developed and employed to assist in the invention, design and optimization of micro-, nano- and opto-electronic devices and circuits. Research in Computational Electronics draws upon knowledge from a variety of disciplines, predominantly solid state physics, quantum mechanics, electromagnetics and numerical algorithms, to achieve an accurate description all aspects of device operation.

Device structure, material composition, and operating principles are all intimately related. For example, the characteristic length scale of devices such as resonant tunneling diodes and quantum dots which rely on coherent quantum effects, is constrained to just a few nanometers. Most optoelectronic devices exploit heterojunctions between two or more different materials for confinement of both charge carriers and light; characteristic thicknesses of absorption or gain regions typically vary from around one hundred nanometers to several microns. Power electronic devices, on the other hand, may reach several millimeters in width due to their current-handling requirements, and are increasingly fabricated using materials other than silicon in a quest for superior thermal performance and breakdown voltage. The wide variety of possible applications, material selections, and realizable device structures make Computational Electronics a broad and exciting field.

Faculty:
Dr. Benjamin Klein
Dr. Doug Yoder